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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2363/2SK2364
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter)
FEATURES
10.00.3
* Low On-Resistance
2SK2363: RDS (on) = 0.5 (VGS = 10 V, ID = 4.0 A) 2SK2364: RDS (on) = 0.6 (VGS = 10 V, ID = 4.0 A)
3.20.2
4.50.2 2.70.2
Drain to Source Voltage (2SK2363/2SK2364) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 %
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS
450/500 30 8.0 32 35 2.0 150 8.0 320
V V A A W W C A mJ
123 0.70.1 2.54
1.30.2 1.50.2 2.54
13.5MIN.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
40.2
12.00.2
* Low Ciss Ciss = 1600 pF TYP. * High Avalanche Capability Ratings * Isolate TO-220 Package
15.00.3
30.1
2.50.1 0.650.1 1. Gate 2. Drain 3. Source
-55 to +150 C
MP-45F (ISOLATED TO-220)
Drain
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
Body Diode Gate
Source
Document No. TC-2504A (O. D. No. TC-8063A) Date Published May 1995 P Printed in Japan
(c)
1994
2SK2363/2SK2364
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS (on) MIN. TYP. 0.4 0.5 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS (off) | yfs | IDSS IGSS Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) trr Qrr 1600 310 30 20 13 83 16 42 10 20 1.0 350 1.5 2.5 4.0 100 100 MAX. 0.5 0.6 3.5 UNIT V S TEST CONDITIONS VGS = 10 V ID = 4.0 A 2SK2363 2SK2364
VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VDS = VDSS, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 4.0 A VGS = 10 V VDD = 150 V RG = 10 RL = 37.5 ID = 8 A VDD = 400 V VGS = 10 V IF = 8 A, VGS = 0 IF = 8 A, VGS = 0 di/dt = 50 A/s
A
nA pF pF pF ns ns ns ns nC nC nC V ns
C
Test Circuit 1 Avalanche Capability
D.U.T. RG = 25 PG VGS = 20 - 0 V 50
Test Circuit 2 Switching Time
D.U.T. L VDD PG. RG RG = 10 RL
VGS
Wave Form
VGS
0 10 % VGS (on) 90 %
VDD
ID
90 % 90 % ID
BVDSS IAS ID VDD VDS
VGS 0 t t = 1us Duty Cycle 1 %
ID
Wave Form
0
10 % td (on) ton tr td (off) toff
10 % tf
Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50
RL VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2363/2SK2364
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 50 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
80
40
60
30
40
20
20
10
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 24
TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed VGS = 20 V 10 V 8V 6V
ID - Drain Current - A
10
0
ID - Drain Current - A
d ite ) Lim 10 V o = S( RD VGS t ID (DC) (a
n)
ID (pulse)
PW
10
1 m s
=
10
20
s
s
16 12 8 4
Po
1.0
w
er
Di
10
10
m
0
s
ss
m
ipa
s
tio
n
Lim
0.1 1
TC = 25 C Single Pulse 10
ite
d
1 000 0 4 8 12 16
100
VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100 Pulsed
VDS - Drain to Source Voltage - V
ID - Drain Current - A
10
1
TA = 125 C 75 C 25 C -25 C
0.1
0
5
10
15
VGS - Gate to Source Voltage - V
3
2SK2363/2SK2364
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth (ch-c) (t) - Transient Thermal Resistance - C/W
1 000 100 10 1 0.1 0.01 Tc = 25 C Single Pulse 0.001 10u 100 u 1m 10 m 100 m 1 10 100 1 000 Rth (ch-a) = 62.5 C/W
Rth (ch-c) = 3.75 C/W
PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5 Pulsed
| yfs | - Forward Transfer Admittance - S
100
VDS = 10 V Pulsed TA = -25 C 25 C 75 C 125 C
RDS (on) - Drain to Source On-State Resistance - W
10
1.0 ID = 10 A 5A 2.5 A 0.5
1.0
0.1
1.0
10
100
0
10
20
30
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed
VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
RDS (on) - Drain to Source on-State Resistance -
VGS (off) - Gate to Source Cutoff Voltage - V
2.0
4.0
3.0
1.0 VGS = 10 V
2.0
1.0
0
1.0
10 ID - Drain Current - A
100
0 -50
0
50
100
150
Tch - Channel Temperature - C
4
2SK2363/2SK2364
RDS (on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.5
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
1.0
ISD - Diode Forward Current - A
100
ID = 10 A 5A
10 VGS = 10 V 1.0 VGS = 0
0.5
0.1 0 0.5 1.0 1.5
VGS = 10 V 0 -50 0 50 100 150
Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS 1 000
td (on), tr, td (of), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 f = 1 MHz Ciss
tr tf 100 td (off) td (on) 10
1 000 Coss
100 Crss
10 1
10
100
1 000
1.0 0.1
1.0
VDS = 150 V VGS = 10 V RG = 10 10 100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 400 di/dt = 50 A/us VGS = 0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 10 A VDD = 400 V 250 V 125 V
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
300
12 VGS 10 8 6
1 000
200
100 VDS
4 2 20 30 40
100
0.1
1.0
10
100
0
10
ID - Drain Current - A
Qg - Gate Charge - nC
VGS - Gate to Source Voltage - V
14
5
2SK2363/2SK2364
SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 400 EAS - Single Avalanche Energy - mJ IAS - Single Avalanche current - A ID (peak) = IAS RG = 25 VGS = 20 V 0 V VDD = 150 V
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD RG = 25 VDD = 150 V VGS = 20 V 0 Starting Tch = 25 C 10 IAS = 8 A
300
320 mJ
EA
200
S
=
32
0m
J
100
1.0 1.0 m 10 m 100 m
0 25
50
75
100
125
150
100
Starting Tch-Starting Channel Temperature - C
L - Inductive load - H
6
2SK2363/2SK2364
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
7
2SK2363/2SK2364
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11

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